Samsung Electronics' 12GB Hi HBM4E memory has passed quality verification tests by major customers such as NVIDIA
The Block
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The Korean Economic Daily reported that Samsung Electronics' 12-layer stacked HBM4E memory passed the quality verification tests of NVIDIA and major hyperscale data center companies at the end of September, but the supply volume, contract scale, and shipment timing with each customer have not yet been finalized. Samsung Electronics previously achieved the sample release of 12Hi HBM4E products in May, but an official response stated that it was unable to confirm whether these products had passed customer quality verification.
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IT Home, October 7th news: According to a report in the "Korean Economic Daily" today local time, Samsung Electronics' 12-layer stacked HBM4E memory has passed the quality verification tests by NVIDIA and major hyperscale data center companies at the end of September. However, the supply volume, contract scale, and shipment timing for each customer have not yet been finalized.

Samsung Electronics previously showcased a 12 Hi HBM4E product in May of this year. It combines 1c nm DRAM Die with 4nm Logic Die, achieving a single-stack capacity of 48GB, supporting a pin rate of 14~16Gbps, and resulting in a 16% improvement in energy efficiency and a 14% reduction in thermal resistance.

Samsung Electronics officially responded that they "cannot confirm" whether their 12-layer HBM4E product has passed customer quality verification.

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