ChangXin Memory has recently made key progress in the development of its 4F2 architecture. Dr. Cao Kanyu, the company's president, delivered a speech at the 4th Integrated Chips and Chiplets Conference, where he provided a comprehensive overview of ChangXin Memory's technological explorations and advancements in DRAM devices, 4F2 architecture, and hybrid bonding. He also officially announced that a new generation of DDR5 RDIMM products incorporating these advanced technologies is expected to be launched by the end of the year.

According to Dr. Cao Kanyu, since its establishment, ChangXin has initiated research and patent development in the 4F² technology, with over 300 published patents, leading domestic and international manufacturers in this area. In 2021, ChangXin published the first paper related to the 4F² architecture in mainland China, and in 2023 and 2025, it shared further research progress on this architecture in two additional papers.

According to inquiries from the IT community, the current industry standard for DRAM units is a 6F² architecture. In DRAM chip design, a storage unit typically consists of one transistor (1T) and one capacitor (1C). 4F² means that each unit occupies only four times the square area of the minimum feature size, which leads to an increase in storage density. The transition from 6F² to 4F² represents a fundamental change, as the existing 6F² process cannot be directly reused; a completely new set of devices and manufacturing processes is required.

It is reported that during the development process, ChangXin Memory conducted in-depth technical exploration and breakthroughs in multiple core manufacturing processes, comprehensively optimizing key procedures such as word line metallization, bit line formation, and junction activation, in order to achieve the best performance-to-power consumption ratio.

This speech did not mention the specifications and release date of the upcoming DDR5 RDIMM from ChangXin. However, DDR5 RDIMM is considered the mainstream configuration in the server market. This means that ChangXin's first-generation product with a 4F2 architecture will be the DDR5 RDIMM, which will face extremely high technical and engineering barriers in the field of server memory.