According to CoinMeta, former Intel CEO Pat Gelsinger, through the venture capital firm Playground Global, is supporting memory startup Nagare Labs in developing the next generation of storage technology Z2RAM. The company has recently completed a $5 million seed round of financing with the goal of creating computing memory that combines the speed of SRAM with the density of DRAM in order to alleviate the "memory wall" bottleneck. Z2RAM utilizes oxide semiconductor materials and plans to be directly integrated on top of logic chips through 3D hybrid bonding. A key selling point is that it uses standard back-end manufacturing processes, allowing for the formation of multi-layer storage structures in a single exposure without the need for extreme ultraviolet lithography (EUV), which is expected to increase density and reduce manufacturing complexity and cost. This technology is still in the laboratory prototype stage, and Nagare Labs is currently seeking research and development manufacturing partners, with plans to launch working Z2RAM memory chip samples within four years.